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TechnologiesOverview

Technologies

Optical Thin Film
Optical Coating
Band Pass Filter
1. Substrate General Specification
Substrate : Silicon / Germanium / Sapphire / Glass etc.
Diameter : ~8inch
Thickness : 0.55±0.05mm




2. Durability TEST Method
Substrate : Silicon / Germanium / Sapphire / Glass etc.
Diameter : ~8inch
Thickness : 0.55±0.05mm




3. Optical Coating Specification





4. CWL(Center Wavelength Length, λ0)
Where λ1 and λ2 are the wavelength at 50% of band pass filter peak transmittance








5. FWHM(Full Width at Half Maximum)
Band width of band pass filter






6. Tpeak (Peak Transmittance)
Maximum transmittance within the band pass filter




7. Out of Band Blocking
It is the amount of energy to the total energy outside the band pass.
Commonly refer to as signal to noise ratio or it is usually express in optical density(OD)






8. Band Pass Shape
Band pass shape is defined to the number of cavities in a filter. The more cavity The number of cavities is defined by customer’s requirement about CWL, FWHM,
Transmittance, and blocking.






Long Wave Pass Filter
1. Substrate General Specification
Substrate : Silicon / Germanium / Sapphire / Glass etc.
Diameter : ~8inch
Thickness : 0.55±0.05mm




2. Durability TEST Method
Humidity : MIL-C-48797A 4.5.3.2
Moderate Abrasion : MIL-C-48497A 4.5.3.3
Adhesion : MIL-C-48497A 4.5.3.1




3. Tavg (Average Transmittance)
Transmittance average from λ1 to λ2 50%



4. λc (Cut on or Cut off Wavelength)
This is the wavelength at which the edge filter begin(or end) to transmit.



5. S% (Slope of Filter in Percent)








Angle and Temperature shift 
1. Wavelength shift with angle
Thin film interference filters change with incident angle. The following equation may be used to define the wavelength at a certain angle of incident.








2. Wavelength shift with Temperature
The center wavelength will shift to a longer wavelength with increasing temperature.







 
Long Wave

Pass Filter

1. Substrate General Specification  
SPO Technology: Using pulsed DC magnetron sputtering and ion beam assisted deposition processes, it precisely controls the composition ratio and thickness of the thin film by dividing the metal sputtering area and the active area, and prevents cation accumulation at the target, so it has a precision thin film deposition technology without defects on the surface of the product.




2. Product Applications
High peak transmission, Deep blocking over wide spectral ranges, precise edge placement, Hard dielectric coating /epoxy free optical path.




3. Product Applications
  Reactive sputtering technology of SPO
Optical Properties Reactive sputtering process with high productivity
Optical thin film without particles and absorption
Low temperature “Hard coating”
High index and stable sputtering system




 
Multichannel

Band Pass Filter

1. Multichannel Band Pass Filter
Multi-spectrum imaging is an optical thin film filter manufacturing technology that can reproduce multiple spectra on a single substrate using a semiconductor process and an optical coating process. Since the semiconductor process is applied, even small patterns can be implemented and optical filters of desired wavelengths can be freely implemented on one substrate.




2. Product Applications
It is used in multiple cameras and is used in aerospace, biomedical, and food industries.



3. Manufacturing process and characteristics

                                                                <Multichannel Band Pass Filter 공정>


  






 
Atomic Layer

Deposition

for Meta optics

1. Atomic Layer Deposition Technology
ALD (Atomic Layer Deposition) technology is a technology that can coat a thin film very precisely. It has an optimal structure for fine processes that require formation of a thin film in nanometer units. The surface of the three-dimensional structure can be uniformly covered, and the thin film can be evenly formed even in a complex nanostructure. This characteristic can stably implement an optimal thin film for a complex 3D structure or Meta Lens.



2. Product Applications
Holography, smartphone cameras, medical device images, autonomous driving, aerospace



3. Manufacturing process and characteristics
Holography, smartphone cameras, medical device images, autonomous driving, aerospace

 

 
Characteristics ALD PVD
Way of growing Step-by-step growth Continuous growth
Rate of growth Accurate growth rate for each cycle Variable growth
Thickness control Precision thickness control by adjusting cycle count Thickness control by multiplying time and growth rate
Coating structure Best for Metal Lens and 3D construction Best for Flat substrates



                                                 



                                                                               

 
Deposition Technique
Property CVD MBE ALD PLD Evaporate Sputtering
Deposition Rate Good Fair Poor Good Good Good
Film density  Good Good Good Good Fair Good
Lack of pinholes Good Good Good Fair Fair Fair
Thickness uniformity Good Fair Good Fair Fair Good
Sharp dopant profiles Fair Good Good Varies Good Poor
Step coverage Varies Poor Good Poor Poor Poor
Sharp interfaces Fair Good Good Varies Good Poor
Low substrate temp Varies Good Good Good Good Good
Smooth interfaces Varies Good Good Varies Good Varies
No plasma damage Varies Good Good Fair Good Poor

                                                                            
Thin film Getter for IR Sensor
1. Getter Pump
The thin-film getter is manufactured in the form of a thin film through the sputter coating process, and can be easily applied to small-sized lids through MEMS processes and applications. Additionally, due to its high surface area and the ability to use various materials, it can achieve fast adsorption rates and efficiency even at low temperatures, making it effective for maintaining vacuum environments.



2. Product Applications
Microbolometers, thermal cameras, aerospace, etc.




3. Sputtering Manufacturing Process and Characteristics   
Covered by Getter film Porous film
 
Ti Film Zr Film




4. Activation

 
Method Material Activeation Temperature Gas
Zr alloy Zr-Ti allys 350 ~ 400°С H2
Zr alloys 200°С for Hydrogen N2, H2
Muiti layer Cr / Ti / Zr < 350 °С H2
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